NTE283 Details_NTE283 PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Current - Collector (Ic) (Max)	10 A
Voltage - Collector Emitter Breakdown (Max)	325 V
Vce Saturation (Max) @ Ib, Ic	3.3V @ 2.5A, 8A
Current - Collector Cutoff (Max)	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 2.5A, 10V
Power - Max	100 W
Frequency - Transition	10MHz
Operating Temperature	200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-204AA, TO-3
Supplier Device Package	TO-3

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