NTE2405 Details_NTE2405 PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	PNP - Darlington
Current - Collector (Ic) (Max)	300 mA
Voltage - Collector Emitter Breakdown (Max)	30 V
Vce Saturation (Max) @ Ib, Ic	1V @ 100µA, 100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	20000 @ 100mA, 5V
Power - Max	350 mW
Frequency - Transition	220MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23

Other

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