NTE2370 Details_NTE2370 PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - Pre-Biased

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	200 MHz
Power - Max	200 mW
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 Short Body
Supplier Device Package	TO-92S

Other

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