MMBTRA226S Details_MMBTRA226S PDF Document_Diotec Semiconductor-Galaxy Core City

Transistors - Bipolar - Pre-Biased

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	800 mA
Voltage - Collector Emitter Breakdown (Max)	-
Resistor - Base (R1)	2.2 kOhms
Resistor - Emitter Base (R2)	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	-
Current - Collector Cutoff (Max)	10µA
Frequency - Transition	200 MHz
Power - Max	200 mW
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3 (TO-236)

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