BCR166WE6327HTSA1 Details_BCR166WE6327HTSA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - Bipolar - Pre-Biased

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	160 MHz
Power - Max	250 mW
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	PG-SOT323-3

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