NSB9435T1G Details_NSB9435T1G PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Pre-Biased

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	3 A
Voltage - Collector Emitter Breakdown (Max)	30 V
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	125 @ 800mA, 1V
Vce Saturation (Max) @ Ib, Ic	550mV @ 300mA, 3A
Current - Collector Cutoff (Max)	-
Frequency - Transition	110 MHz
Power - Max	720 mW
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	SOT-223

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