DTD543XETL Details_DTD543XETL PDF Document_Rohm Semiconductor-Galaxy Core City

Transistors - Bipolar - Pre-Biased

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	500 mA
Voltage - Collector Emitter Breakdown (Max)	12 V
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	140 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic	300mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	260 MHz
Power - Max	150 mW
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Supplier Device Package	EMT3

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