NSBA124EF3T5G Details_NSBA124EF3T5G PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Pre-Biased

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	254 mW
Mounting Type	Surface Mount
Package / Case	SOT-1123
Supplier Device Package	SOT-1123

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