RN1421TE85LF Details_RN1421TE85LF PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

Transistors - Bipolar - Pre-Biased

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	800 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	1 kOhms
Resistor - Emitter Base (R2)	1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic	250mV @ 2mA, 50mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	300 MHz
Power - Max	200 mW
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini

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