UNR421L00A Details_UNR421L00A PDF Document_Panasonic Electronic Components-Galaxy Core City

Transistors - Bipolar - Pre-Biased

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Specifications

Description	Details
Series	-
Package	Cut Tape (CT)Tape & Box (TB)
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	150 MHz
Power - Max	300 mW
Mounting Type	Through Hole
Package / Case	3-SSIP
Supplier Device Package	NS-B1

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