RN1111ACT(TPL3) Details_RN1111ACT(TPL3) PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

Transistors - Bipolar - Pre-Biased

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	80 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	-
Power - Max	100 mW
Mounting Type	Surface Mount
Package / Case	SC-101, SOT-883
Supplier Device Package	CST3

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