MMDT5212W Details_MMDT5212W PDF Document_Diotec Semiconductor-Galaxy Core City

Transistors - Bipolar - Pre-Biased

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	-
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	-
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	250 MHz
Power - Max	200 mW
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	SOT-323

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