DTDG23YPT100 Details_DTDG23YPT100 PDF Document_Rohm Semiconductor-Galaxy Core City

Transistors - Bipolar - Pre-Biased

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	1 A
Voltage - Collector Emitter Breakdown (Max)	60 V
Resistor - Base (R1)	2.2 kOhms
Resistor - Emitter Base (R2)	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic	400mV @ 5mA, 500mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	80 MHz
Power - Max	1.5 W
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	MPT3

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