BCR583E6327 Details_BCR583E6327 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - Bipolar - Pre-Biased

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Specifications

Description	Details
Series	*
Package	Bulk
Transistor Type	-
Current - Collector (Ic) (Max)	-
Voltage - Collector Emitter Breakdown (Max)	-
Resistor - Base (R1)	-
Resistor - Emitter Base (R2)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Vce Saturation (Max) @ Ib, Ic	-
Current - Collector Cutoff (Max)	-
Frequency - Transition	-
Power - Max	-
Mounting Type	-
Package / Case	-
Supplier Device Package	-

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