EFC6605R-TR Details_EFC6605R-TR PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)	-
Current - Continuous Drain (Id) @ 25°C	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	19.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1.6W
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-SMD, No Lead
Supplier Device Package	6-EFCP (1.9x1.46)

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