PHKD6N02LT,518 Details_PHKD6N02LT,518 PDF Document_Nexperia USA Inc.-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchMOS™
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	10.9A
Rds On (Max) @ Id, Vgs	20mOhm @ 3A, 5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	950pF @ 10V
Power - Max	4.17W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

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