VQ2001P Details_VQ2001P PDF Document_Vishay Siliconix-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	4 P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	600mA
Rds On (Max) @ Id, Vgs	2Ohm @ 1A, 12V
Vgs(th) (Max) @ Id	4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	150pF @ 15V
Power - Max	2W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	-
Package / Case	-
Supplier Device Package	-

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