SSM6L40TU,LF Details_SSM6L40TU,LF PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	1.6A (Ta), 1.4A (Ta)
Rds On (Max) @ Id, Vgs	122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V
Vgs(th) (Max) @ Id	2.6V @ 1mA, 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	5.1nC, 2.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	180pF, 120pF @ 15V
Power - Max	500mW (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Supplier Device Package	UF6

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