FTCO3V455A1 Details_FTCO3V455A1 PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	SPM®
Package	Tube
FET Type	6 N-Channel (3-Phase Bridge)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	150A
Rds On (Max) @ Id, Vgs	1.66mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	115W
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Package / Case	19-PowerDIP Module
Supplier Device Package	Module

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