SI5511DC-T1-E3 Details_SI5511DC-T1-E3 PDF Document_Vishay Siliconix-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	4A, 3.6A
Rds On (Max) @ Id, Vgs	55mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	435pF @ 15V
Power - Max	3.1W, 2.6W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Supplier Device Package	1206-8 ChipFET™

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