CSD87350Q5D Details_CSD87350Q5D PDF Document_Texas Instruments-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	NexFET™
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	40A
Rds On (Max) @ Id, Vgs	5.9mOhm @ 20A, 8V
Vgs(th) (Max) @ Id	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1770pF @ 15V
Power - Max	12W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerLDFN
Supplier Device Package	8-LSON (5x6)

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