CAS325M12HM2 Details_CAS325M12HM2 PDF Document_Cree/Wolfspeed-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	Z-REC™
Package	Bulk
FET Type	2 N-Channel (Half Bridge)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	444A (Tc)
Rds On (Max) @ Id, Vgs	4.3mOhm @ 400A, 20V
Vgs(th) (Max) @ Id	4V @ 105mA
Gate Charge (Qg) (Max) @ Vgs	1127nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	3000W
Operating Temperature	175°C (TJ)
Mounting Type	-
Package / Case	Module
Supplier Device Package	Module

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