STS8C5H30L Details_STS8C5H30L PDF Document_STMicroelectronics-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	STripFET™ III
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8A, 5.4A
Rds On (Max) @ Id, Vgs	22mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	857pF @ 25V
Power - Max	2W
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

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