TC6321T-V/9U Details_TC6321T-V/9U PDF Document_Microchip Technology-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Rds On (Max) @ Id, Vgs	7Ohm @ 1A, 10V, 8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA, 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	110pF @ 25V, 200pF @ 25V
Power - Max	-
Operating Temperature	-55°C ~ 175°C
Mounting Type	Surface Mount
Package / Case	8-VDFN Exposed Pad
Supplier Device Package	8-VDFN (6x5)

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