FDMC6890NZ Details_FDMC6890NZ PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	PowerTrench®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4A
Rds On (Max) @ Id, Vgs	68mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	270pF @ 10V
Power - Max	1.92W, 1.78W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-WDFN Exposed Pad
Supplier Device Package	MicroFET 3x3mm

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