AO4616L Details_AO4616L PDF Document_Alpha & Omega Semiconductor Inc.-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N and P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8.1A (Ta), 7.1A (Ta)
Rds On (Max) @ Id, Vgs	20mOhm @ 8.1A, 10V, 25mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA, 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19.2nC @ 10V, 30.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1250pF @ 15V, 1573pF @ 15V
Power - Max	2W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC

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