SI4618DY-T1-GE3 Details_SI4618DY-T1-GE3 PDF Document

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Half Bridge)
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	8A, 15.2A
Rds On (Max) @ Id, Vgs	17mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1535pF @ 15V
Power - Max	1.98W, 4.16W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

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