FDMS3610S Details_FDMS3610S PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	PowerTrench®
Package	Bulk
FET Type	2 N-Channel (Dual) Asymmetrical
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	17.5A, 30A
Rds On (Max) @ Id, Vgs	5mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1570pF @ 13V
Power - Max	1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	Power56

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