EFC6602R-TR Details_EFC6602R-TR PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Dual) Common Drain
FET Feature	Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	18A (Ta)
Rds On (Max) @ Id, Vgs	5.9mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	55nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	2W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-XFBGA, WLCSP
Supplier Device Package	6-WLCSP (1.81x2.7)

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