AUIRFN8458TR Details_AUIRFN8458TR PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	HEXFET®
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	43A (Tc)
Rds On (Max) @ Id, Vgs	10mOhm @ 26A, 10V
Vgs(th) (Max) @ Id	3.9V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1060pF @ 25V
Power - Max	34W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	PQFN (5x6)

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