IPG15N06S3L-45 Details_IPG15N06S3L-45 PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	OptiMOS™
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25°C	15A
Rds On (Max) @ Id, Vgs	45mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1420pF @ 25V
Power - Max	21W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Supplier Device Package	PG-TDSON-8-4

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