APTM10HM19FT3G Details_APTM10HM19FT3G PDF Document_Microchip Technology-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	4 N-Channel (H-Bridge)
FET Feature	Standard
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	70A
Rds On (Max) @ Id, Vgs	21mOhm @ 35A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	5100pF @ 25V
Power - Max	208W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SP3
Supplier Device Package	SP3

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