SI4942DY-T1-E3 Details_SI4942DY-T1-E3 PDF Document_Vishay Siliconix-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	5.3A
Rds On (Max) @ Id, Vgs	21mOhm @ 7.4A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1.1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

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