VQ1001P-E3 Details_VQ1001P-E3 PDF Document_Vishay Siliconix-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	4 N-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	830mA
Rds On (Max) @ Id, Vgs	1.75Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	110pF @ 15V
Power - Max	2W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	-
Supplier Device Package	14-DIP

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