PMCPB5530X,115 Details_PMCPB5530X,115 PDF Document_Nexperia USA Inc.-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	-
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4A (Ta), 3.4A (Ta)
Rds On (Max) @ Id, Vgs	34mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	660pF @ 10V
Power - Max	490mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-UDFN Exposed Pad
Supplier Device Package	6-HUSON-EP (2x2)

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