EFC4C012NLTDG Details_EFC4C012NLTDG PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Dual) Common Drain
FET Feature	Standard
Drain to Source Voltage (Vdss)	-
Current - Continuous Drain (Id) @ 25°C	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	2.5W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-SMD, No Lead
Supplier Device Package	6-WLCSP (3.5x1.9)

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