FD6M043N08 Details_FD6M043N08 PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	Power-SPM™
Package	Tube
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25°C	65A
Rds On (Max) @ Id, Vgs	4.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	148nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	6180pF @ 25V
Power - Max	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	EPM15
Supplier Device Package	EPM15

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