MCH6601-TL-E Details_MCH6601-TL-E PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	200mA
Rds On (Max) @ Id, Vgs	10.4Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	1.43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	7.5pF @ 10V
Power - Max	800mW
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Supplier Device Package	6-MCPH

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