APTSM120AM09CD3AG Details_APTSM120AM09CD3AG PDF Document_Microsemi Corporation-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	337A (Tc)
Rds On (Max) @ Id, Vgs	11mOhm @ 180A, 20V
Vgs(th) (Max) @ Id	3V @ 9mA
Gate Charge (Qg) (Max) @ Vgs	1224nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	23000pF @ 1000V
Power - Max	-
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

Other

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