BSM250D17P2E004 Details_BSM250D17P2E004 PDF Document_Rohm Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Box
FET Type	2 N-Channel (Half Bridge)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C	250A (Tc)
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	4V @ 66mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	30000pF @ 10V
Power - Max	1800W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

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