IRF9395MTR1PBF Details_IRF9395MTR1PBF PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	HEXFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	14A
Rds On (Max) @ Id, Vgs	7mOhm @ 14A, 10V
Vgs(th) (Max) @ Id	2.4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	64nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3241pF @ 15V
Power - Max	2.1W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	DirectFET™ Isometric MC
Supplier Device Package	DIRECTFET™ MC

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