BSM180D12P3C007 Details_BSM180D12P3C007 PDF Document_Rohm Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	5.6V @ 50mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	900pF @ 10V
Power - Max	880W
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Package / Case	Module
Supplier Device Package	Module

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