APTC80AM75SCG Details_APTC80AM75SCG PDF Document_Microchip Technology-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Half Bridge)
FET Feature	Standard
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	56A
Rds On (Max) @ Id, Vgs	75mOhm @ 28A, 10V
Vgs(th) (Max) @ Id	3.9V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	364nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	9015pF @ 25V
Power - Max	568W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SP6
Supplier Device Package	SP6

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