UPA2690T1R-E2-AX Details_UPA2690T1R-E2-AX PDF Document_Renesas Electronics America Inc-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N and P-Channel Complementary
FET Feature	Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4A, 3A
Rds On (Max) @ Id, Vgs	42mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	4.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	330pF @ 10V
Power - Max	2.3W
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-PowerWDFN
Supplier Device Package	6-HUSON (2x2)

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