NVMFD5852NLT1G Details_NVMFD5852NLT1G PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	15A
Rds On (Max) @ Id, Vgs	6.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 25V
Power - Max	3.2W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	8-DFN (5x6) Dual Flag (SO8FL-Dual)

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