SSM6L56FE,LM Details_SSM6L56FE,LM PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	800mA (Ta)
Rds On (Max) @ Id, Vgs	235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	55pF @ 10V, 100pF @ 10V
Power - Max	150mW (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	ES6

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