FDM2509NZ Details_FDM2509NZ PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	PowerTrench®
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	8.7A
Rds On (Max) @ Id, Vgs	18mOhm @ 8.7A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 10V
Power - Max	800mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-WFDFN Exposed Pad
Supplier Device Package	6-MicroFET (2x5)

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