SH8MA2GZETB Details_SH8MA2GZETB PDF Document_Rohm Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	4.5A (Ta)
Rds On (Max) @ Id, Vgs	80mOhm @ 4.5A, 10V, 82mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	3nC, 6.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	125pF, 305pF @ 15V
Power - Max	1.4W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOP

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