BSD235CH6327XTSA1 Details_BSD235CH6327XTSA1 PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	OptiMOS™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	950mA, 530mA
Rds On (Max) @ Id, Vgs	350mOhm @ 950mA, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 1.6µA
Gate Charge (Qg) (Max) @ Vgs	0.34nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	47pF @ 10V
Power - Max	500mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-VSSOP, SC-88, SOT-363
Supplier Device Package	PG-SOT363-6

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