FDMC007N30D Details_FDMC007N30D PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	46A
Rds On (Max) @ Id, Vgs	11.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1110pF @ 15V, 2360pF @ 15V
Power - Max	1.9W, 2.5W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Supplier Device Package	8-MLP (3x3)

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